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Publication : DNA double-strand breaks induce H2Ax phosphorylation domains in a contact-dependent manner.

First Author  Collins PL Year  2020
Journal  Nat Commun Volume  11
Issue  1 Pages  3158
PubMed ID  32572033 Mgi Jnum  J:292050
Mgi Id  MGI:6447095 Doi  10.1038/s41467-020-16926-x
Citation  Collins PL, et al. (2020) DNA double-strand breaks induce H2Ax phosphorylation domains in a contact-dependent manner. Nat Commun 11(1):3158
abstractText  Efficient repair of DNA double-strand breaks (DSBs) requires a coordinated DNA Damage Response (DDR), which includes phosphorylation of histone H2Ax, forming gammaH2Ax. This histone modification spreads beyond the DSB into neighboring chromatin, generating a DDR platform that protects against end disassociation and degradation, minimizing chromosomal rearrangements. However, mechanisms that determine the breadth and intensity of gammaH2Ax domains remain unclear. Here, we show that chromosomal contacts of a DSB site are the primary determinants for gammaH2Ax landscapes. DSBs that disrupt a topological border permit extension of gammaH2Ax domains into both adjacent compartments. In contrast, DSBs near a border produce highly asymmetric DDR platforms, with gammaH2Ax nearly absent from one broken end. Collectively, our findings lend insights into a basic DNA repair mechanism and how the precise location of a DSB may influence genome integrity.
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