| First Author | Xu T | Year | 2024 |
| Journal | Cell Rep | Volume | 43 |
| Issue | 7 | Pages | 114454 |
| PubMed ID | 38990721 | Mgi Jnum | J:353435 |
| Mgi Id | MGI:7708997 | Doi | 10.1016/j.celrep.2024.114454 |
| Citation | Xu T, et al. (2024) Notch2 signaling governs activated B cells to form memory B cells. Cell Rep 43(7):114454 |
| abstractText | Memory B cells (MBCs) are essential for humoral immunological memory and can emerge during both the pre-germinal center (GC) and GC phases. However, the transcription regulators governing MBC development remain poorly understood. Here, we report that the transcription regulator Notch2 is highly expressed in MBCs and their precursors at the pre-GC stage and required for MBC development without influencing the fate of GC and plasma cells. Mechanistically, Notch2 signaling promotes the expression of complement receptor CD21 and augments B cell receptor (BCR) signaling. Reciprocally, BCR activation up-regulates Notch2 surface expression in activated B cells via a translation-dependent mechanism. Intriguingly, Notch2 is dispensable for GC-derived MBC formation. In summary, our findings establish Notch2 as a pivotal transcription regulator orchestrating MBC development through the reciprocal enforcement of BCR signaling during the pre-GC phase and suggest that the generation of GC-independent and -dependent MBCs is governed by distinct transcriptional mechanisms. |
