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Publication : Cutting edge: The signals for the generation of T cell memory are qualitatively different depending on TCR ligand strength.

First Author  Knudson KM Year  2013
Journal  J Immunol Volume  191
Issue  12 Pages  5797-801
PubMed ID  24244018 Mgi Jnum  J:207112
Mgi Id  MGI:5554477 Doi  10.4049/jimmunol.1300905
Citation  Knudson KM, et al. (2013) Cutting edge: The signals for the generation of T cell memory are qualitatively different depending on TCR ligand strength. J Immunol 191(12):5797-801
abstractText  CD8 T cell memory critically contributes to long-term immunity. Both low- and high-affinity TCR signals are able to support the differentiation of memory CD8 T cells. However, it is unclear whether the requirements for memory development change when TCR signal strength is altered. To gain further insight into this question, we used a TCRbeta transmembrane domain mutant model that is defective in the generation of memory in response to high-affinity ligands. Surprisingly, lowering TCR signal strength, by stimulation with low-affinity ligands, resulted in normal memory development. Restoration of memory correlated with recovery of TCR-dependent NF-kappaB signaling. Thus, these data provide novel evidence that the requirements for memory are qualitatively different depending on TCR signal strength.
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